Structure for preventing leakage of a semiconductor device

Details Structure for preventing leakage of a semiconductor device Structure for preventing leakage of a semiconductor device

2006-05-24

2009-10-06

Ngo, Ngan (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

With means to increase breakdown voltage threshold

Field relief electrode

C257S488000, C257S503000, C257S659000, C257SE29012

Reexamination Certificate

active

07598585

ABSTRACT:
A structure for preventing leakage of a semiconductor device is provided. The structure comprises a conductive layer, for shielding the features beneath thereof, located under a conductive line which crosses over a region having high voltage device. The conductive layer is wider than the conductive line.

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patent: 7084481 (2006-08-01), Lowther et al.
patent: 2001/0017418 (2001-08-01), Noguchi et al.
patent: 2002/0024148 (2002-02-01), Itoh

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