Structure for preventing field concentration in semiconductor de

Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold – Field relief electrode

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257488, 257409, H01L 2940

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active

052045455

ABSTRACT:
There is provided p diffusion regions (18a, 18b) in the surface of an end portion of the n island (7) formed on the p.sup.- substrate (12). The insulation film (14) is formed on the n island (7) to form therein conductive plates (16a-16e). The p diffusion regions (18a, 18b) and the conductive plates (16a-16e) are alternately arranged and so aligned that adjacent pairs of end portions thereof overlap with each other. Capacitances of capacitive coupling of the conductive plates (16a-16e) and the p diffusion regions (18a, 18b) are optimized so that potentials of the conductive plates (16a-16e) and the p diffusion regions (18a, 18b) can substantially linearly change from a low level to a high level. Thus, the concentration of electric field can be prevented.

REFERENCES:
patent: 4567502 (1986-01-01), Nakagawa
patent: 4707719 (1987-11-01), Whight
patent: 4789886 (1988-12-01), Pike, Jr.
patent: 4801995 (1989-01-01), Iwanishi
patent: 5043781 (1991-08-01), Nishiura et al.
patent: 5075739 (1991-12-01), Davies
IEDM 1984 pp. 266-269 850V NMOS Driver with Active Outputs.

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