Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold
Patent
1991-06-04
1993-12-14
Carroll, J.
Active solid-state devices (e.g., transistors, solid-state diode
With means to increase breakdown voltage threshold
257488, 257490, 257495, H01L 2934, H01L 2940
Patent
active
052705684
ABSTRACT:
Conductive plates (16a-16e), or floating semiconductor regions (17a-17d), or conductive plates (16a, 16c, 16e) and floating semiconductor regions (17a, 17d) are disposed in alignment so that a coupling capacitance between the conductive plates and/or the floating semiconductor regions which are adjacent to each other decrease as a distance from a first or second semiconductor region (12, 13) increases. Therefore, the respective potentials at the conductive plates or the floating semiconductor regions can be varied linearly (or at equal potential differences), and corresponding potential distribution can be achieved on the surface of a semiconductor substrate (11). As a result, electric field concentration on the surface of the semiconductor substrate (11) just under a high potential conductive layer (14) can be prevented effectively even by the use of an insulating layer (15) with a common thickness.
REFERENCES:
patent: 4707719 (1987-11-01), Whight
patent: 5068756 (1991-11-01), Morris et al.
Martin, Russel A. et al, "850V NMOS Driver with Active Outputs", 1984, pp. 266-269.
Carroll J.
Mitsubishi Denki & Kabushiki Kaisha
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