Structure for monitoring semiconductor polysilicon gate profile

Semiconductor device manufacturing: process – With measuring or testing

Reexamination Certificate

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C257SE21521

Reexamination Certificate

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11539231

ABSTRACT:
Detection of a profile drift of a polysilicon line is enhanced by a test structure that (1) measures a bottom width and an average width of a cross sectional area of the same polysilicon line (2) correlates the two measurements, and (3) compares such correlation with a previous correlation of bottom width to average width of cross sectional area of the same polysilicon line.

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