Structure for monitoring semiconductor polysilicon gate profile

Details Structure for monitoring semiconductor polysilicon gate profile Structure for monitoring semiconductor polysilicon gate profile

2008-07-08

2008-07-08

Le, Thao X. (Department: 2892)

Semiconductor device manufacturing: process

With measuring or testing

C257SE21521

Reexamination Certificate

active

07396694

ABSTRACT:
Detection of a profile drift of a polysilicon line is enhanced by a test structure that (1) measures a bottom width and an average width of a cross sectional area of the same polysilicon line (2) correlates the two measurements, and (3) compares such correlation with a previous correlation of bottom width to average width of cross sectional area of the same polysilicon line.

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