Structure for low cost mixed memory integration, new NVRAM struc

Details Structure for low cost mixed memory integration, new NVRAM struc Structure for low cost mixed memory integration, new NVRAM struc

1997-04-14

1999-03-09

Fears, Terrell W.

Static information storage and retrieval

Systems using particular element

Semiconductive

365 51, G11C 1300

Patent

active

058809910

ABSTRACT:
A semiconductor memory device including an NVRAM cell structure, a DRAM cell structure, and an SRAM cell structure. The NVRAM cell structure, the DRAM cell structure, and the SRAM cell structure are on the same substrate. An NVRAM cell structure. Processes for forming a memory structure that includes NVRAM, DRAM, and/or SRAM memory structures on one substrate and processes for forming a new NVRAM cell structure.

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