Structure for controlling threshold voltage of MOSFET

Details Structure for controlling threshold voltage of MOSFET Structure for controlling threshold voltage of MOSFET

1996-06-18

1998-08-11

Fahmy, Wael

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257335, H01L 2976, H01L 2994, H01L 31062, H01L 31113

Patent

active

057930880

ABSTRACT:
A method and structure for controlling the threshold voltage of a MOSFET is provided. The method compensates for the edge effect associated with prior art halo implants by providing an edge threshold voltage implant (the VT implant) which passes impurities through dielectric spacers, through the underlying source/drain regions and into the edges of the halo regions which lie in the channel. The VT implant reduces junction capacitance and does not degrade punchthrough voltage.

REFERENCES:
patent: 5147811 (1992-09-01), Sakagami
patent: 5395773 (1995-03-01), Ravindhran et al.
patent: 5405791 (1995-04-01), Ahmad et al.
patent: 5427964 (1995-06-01), Kaneshiro et al.
patent: 5449937 (1995-09-01), Arimura et al.
patent: 5532508 (1996-07-01), Kaneko et al.
patent: 5650340 (1997-07-01), Burr et al.

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