Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2006-07-25
2006-07-25
Pham, Hoai (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S384000, C257S741000, C257S769000
Reexamination Certificate
active
07081676
ABSTRACT:
A method of producing electrical contacts having reduced interface roughness as well as the electrical contacts themselves are disclosed herein. The method of the present invention comprises (a) forming an alloy layer having the formula MX, wherein M is a metal selected from the group consisting of Co and Ni and X is an alloying additive, over a silicon-containing substrate; (b) optionally forming an optional oxygen barrier layer over said alloy layer; (c) annealing said alloy layer at a temperature sufficient to form a MXSi layer in said structure; (d) removing said optional oxygen barrier layer and any remaining alloy layer; and optionally (e) annealing said MXSi layer at a temperature sufficient to form a MXSi2layer in said structure.
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Agnello Paul David
Cabral, Jr. Cyril
Carruthers Roy Arthur
Harper James McKell Edwin
Jordan-Sweet Jean Louise
Hafiz Mursalin B.
International Business Machines - Corporation
Pham Hoai
Scully , Scott, Murphy & Presser, P.C.
Trepp, Esq. Robert M.
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