Structure for CMOS image sensor with a plurality of capacitors

Details Structure for CMOS image sensor with a plurality of capacitors Structure for CMOS image sensor with a plurality of capacitors

2005-01-27

2010-12-07

Selby, Gevell (Department: 2622)

Television

Camera, system and detail

Solid-state image sensor

C348S294000

Reexamination Certificate

active

07847847

ABSTRACT:
A CMOS image sensor having increased capacitance that allows a photo-diode to generate a larger current is provided. The increased capacitance reduces noise and the dark signal. The image sensor utilizes a transistor having nitride spacers formed on a buffer oxide layer. Additional capacitance may be provided by various capacitor structures, such as a stacked capacitor, a planar capacitor, a trench capacitor, a MOS capacitor, a MIM/PIP capacitor, or the like. Embodiments of the present invention may be utilized in a 4-transistor pixel or a 3-transistor pixel configuration.

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