Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having schottky gate
Reexamination Certificate
2008-07-01
2008-07-01
Baumeister, Bradley W. (Department: 2891)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having schottky gate
C438S514000, C438S933000, C438S938000, C257S019000, C257S616000, C257SE21102
Reexamination Certificate
active
07393735
ABSTRACT:
A structure and method of fabricating a high-mobility semiconductor layer structure and field-effect transistor (MODFET) that includes a high-mobility conducting channel, while at the same time, maintaining counter doping to control deleterious short-channel effects. The MODFET design includes a high-mobility conducting channel layer wherein the method allows the counter doping to be formed using a standard technique such as ion implantation, and further allows the high-mobility channel to be in close proximity to the counter doping without degradation of the mobility.
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patent: 6350311 (2002-02-01), Chin et al.
patent: 6982433 (2006-01-01), Hoffman et al.
patent: 2003/0102490 (2003-06-01), Kubo et al.
Chu Jack O.
Koester Steven J.
Ouyang Qiqing C.
Baumeister Bradley W.
International Business Machines - Corporation
Scully , Scott, Murphy & Presser, P.C.
Such Matthew W
Trepp, Esq. Robert M.
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