Structure for a semiconductor device comprising conductive trenc

Details Structure for a semiconductor device comprising conductive trenc Structure for a semiconductor device comprising conductive trenc

1994-02-09

1994-12-27

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257773, 257621, H01L 2702, H01L 2348, H01L 2340

Patent

active

053768175

ABSTRACT:
A structure for a semiconductor integrated circuit device comprises a p-type transistor and an n-type transistor, with each transistor having two diffusion regions. A trench interposed between the two transistors comprises a pair of conductively doped sidewalls. One sidewall is electrically coupled with power, and the other is electrically coupled with ground. A diffusion region from each transistor is electrically coupled with one of the sidewalls, with one transistor receiving power and the other receiving ground from the conductive sidewalls. The two transistor diffusion regions not electrically coupled with one of the sidewalls are electrically interconnected.

REFERENCES:
patent: 4661202 (1987-04-01), Ochii
patent: 5001525 (1991-03-01), Kenney

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