Structure for a semiconductor device and a method of...

Details Structure for a semiconductor device and a method of... Structure for a semiconductor device and a method of...

2011-04-19

2011-04-19

Pert, Evan (Department: 2826)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S648000, C257SE21584, C257SE23141

Reexamination Certificate

active

07928006

ABSTRACT:
There is described a method of manufacturing a damascene interconnect (1) for a semiconductor device. A non conductive diffusion barrier (10) is formed over the wall(s) of a passage (7) defined by a porous low K di-electric material (6) and over the surface of a copper region (3) that closes one end of the passage (7). The non-conductive barrier layer (10) is plasma treated to transform an upper portion thereof (10b) into a conductive layer, while a low portion thereof (10a) comprising material that has penetrated pores of the di-electric material remains non-conductive. The passage (7) is then filled with a second copper region (13) forming an electrical interconnect with the first copper region (3) via the now conductive upper portion (1Ob) of the barrier (10). As a person skilled in the art will know, all embodiments of the invention described and claimed in this document may be combined without departing from the scope of the invention.

REFERENCES:
patent: 6268288 (2001-07-01), Hautala et al.
patent: 2001/0054769 (2001-12-01), Raaijmakers et al.
patent: 0806799 (1997-11-01), None
patent: 02063677 (2002-08-01), None

Affiliated with

Also associated with

Rating

Structure for a semiconductor device and a method of... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Structure for a semiconductor device and a method of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Structure for a semiconductor device and a method of... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2712265