Structure for a parasitic capacitor and a storage capacitor in a

Details Structure for a parasitic capacitor and a storage capacitor in a Structure for a parasitic capacitor and a storage capacitor in a

1996-01-29

1998-08-18

Gross, Anita Pellman

Liquid crystal cells, elements and systems

Particular excitation of liquid crystal

Electrical excitation of liquid crystal

349 38, 349 43, G02F 11343, G02F 1136

Patent

active

057964483

ABSTRACT:
The present invention includes a drain of the TFT which operates as a first upper electrode of the parasitic capacitor. A second upper electrode of the storage capacitor overlaps with the pixel electrode. An insulating layer is disposed between the second upper electrode and the pixel electrode. An insulating layer is also disposed between a first lower electrode of the parasitic capacitor at its associated upper electrode, as well as a second lower electrode of the storage capacitor and its associated upper electrode. Further, the overlapping direction of the two upper electrodes is identical with that of the two lower electrodes so that an undesired dc-offset voltage is made proportional between each of the pixels in the TFT-LCD array.

REFERENCES:
patent: 5182661 (1993-01-01), Ikeda et al.
patent: 5276540 (1994-01-01), Okamoto et al.

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