Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask
Reexamination Certificate
2006-12-01
2010-11-23
Rosasco, Stephen (Department: 1795)
Radiation imagery chemistry: process, composition, or product th
Radiation modifying product or process of making
Radiation mask
C430S311000
Reexamination Certificate
active
07838173
ABSTRACT:
The present disclosure provides a mask. The mask includes a substrate; a first attenuating layer disposed on the substrate, having a first material and a first thickness corresponding to a phase shift; and a second attenuating layer having a second material and disposed on the first attenuating layer. The first and second attenuating layers define a first feature having a first opening extending through the first and second attenuating layers; and a second feature having a second opening extending through the second attenuating layer and exposing the first attenuating layer. One of the first and second features is a main feature and the other one is an assistant feature proximate to the main feature.
REFERENCES:
patent: 5288569 (1994-02-01), Lin
patent: 5403682 (1995-04-01), Lin
patent: 6436587 (2002-08-01), Ulrich et al.
patent: 6703168 (2004-03-01), Misaka
patent: 6838214 (2005-01-01), Chen
patent: 2002/0177050 (2002-11-01), Tanaka
patent: 2003/0027366 (2003-02-01), Dulman et al.
patent: 2003/0077520 (2003-04-01), Smith
Stephen D. Hsu et al., “RET Integration of CPL Technology for Random Logic”, Optical Microlithography XVII, edited by Bruce W. Smith, Proceedings of SPIE vol. 5377, pp. 510-526.
Takashi Yuito et al., “‘Mask Enhancer’ Technology for 45-nm Node Contact Hole Fabrication”, 10 pages.
Van Den Broeke, Douglas, et al., “Contact and Via Hole Mask Design Optimization for 65nm Technology Node,” 24thAnnual BACUS Symposium on Photomask Technology, SPIE, vol. 5567, p. 680, 2004.
Chang Ya Hui
Wang Shih-Che
Wu Tsiao Chen
Haynes and Boone LLP
Jelsma Jonathan
Rosasco Stephen
Taiwan Semiconductor Manufacturing Company , Ltd.
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