Structure applied to a photolithographic process and method...

Details Structure applied to a photolithographic process and method... Structure applied to a photolithographic process and method...

2006-03-07

2006-03-07

Blum, David (Department: 2813)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S626000, C438S697000

Reexamination Certificate

active

07008870

ABSTRACT:
A structure applied to a photolithographic process is provided. The structure comprises at least a film layer, an optical isolation layer, an anti-reflection coating and a photoresist layer sequentially formed over a substrate. In the photolithographic process, the optical isolation layer stops light from penetrating down to the film layer. Since the optical isolation layer is set up underneath the photoresist layer, light emitted from a light source during photo-exposure is prevented from reflecting from the substrate surface after passing through the film layer. Thus, the critical dimensions of the photolithographic process are unaffected by any change in the thickness of the film layer.

REFERENCES:
patent: 2001/0051425 (2001-12-01), Lee et al.
patent: 2004/0198030 (2004-10-01), Buehrer et al.

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