Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having schottky gate
Reexamination Certificate
2007-08-14
2007-08-14
Smith, Matthew (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having schottky gate
C438S230000, C257S069000, C257S204000, C257S900000, C257SE29260
Reexamination Certificate
active
10906054
ABSTRACT:
A semiconductor device is provided with a stressed channel region, where the stresses film causing the stress in the stress channel region can extend partly or wholly under the gate structure of the semiconductor device. In some embodiments, a ring of stress film surround the channel region, and may apply stress from all sides of the channel. Consequently, the stress film better surrounds the channel region of the semiconductor device and can apply more stress in the channel region.
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Yang Haining S.
Zhu Huilong
Abate Joseph P.
Greenblum & Bernstein P.L.C.
International Business Machines - Corporation
Pham Thanh V.
Smith Matthew
LandOfFree
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