Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-04-29
2008-04-29
Toledo, Fernando L. (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C438S409000
Reexamination Certificate
active
11333074
ABSTRACT:
A semiconducting material that has all the advantages of prior art SOI substrates including, for example, low parasitic capacitance and leakage, without having floating body effects is provided. More specifically, the present invention provides a Semiconductor-on-Pores (SOP) material that includes a top semiconductor layer and a bottom semiconductor layer, wherein the semiconductor layers are separated in at least one region by a porous semiconductor material. Semiconductor structures including the SOP material as a substrate as well as a method of fabricating the SOP material are also provided. The method includes forming a p-type region with a first semiconductor layer, converting the p-type region to a porous semiconductor material, sealing the upper surface of the porous semiconductor material by annealing, and forming a second semiconductor layer atop the porous semiconductor material.
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de Souza Joel P.
Fogel Keith E.
Greene Brian J.
Sadana Devendra K.
Yang Haining S.
International Business Machines - Corporation
Scully , Scott, Murphy & Presser, P.C.
Toledo Fernando L.
Trepp, Esq. Robert M.
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