Structure and method to fabricate ultra-thin Si channel devices

Details Structure and method to fabricate ultra-thin Si channel devices Structure and method to fabricate ultra-thin Si channel devices

2005-06-14

2005-06-14

Le, Thao P. (Department: 2818)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S425000

Reexamination Certificate

active

06905941

ABSTRACT:
A method for preventing polysilicon stringer formation under the active device area of an isolated ultra-thin Si channel device is provided. The method utilizes a chemical oxide removal (COR) processing step to prevent stinger formation, instead of a conventional wet etch process wherein a chemical etchant such as HF is employed. A silicon-on-insulator (SOI) structure is also provided. The structure includes at least a top Si-containing layer located on a buried insulating layer; and an oxide filled trench isolation region located in the top Si-containing layer and a portion of the buried insulating layer. No undercut regions are located beneath the top Si-containing layer.

REFERENCES:
patent: 5766971 (1998-06-01), Ahlgren et al.
patent: 5838055 (1998-11-01), Kleinhenz et al.
patent: 5876879 (1999-03-01), Kleinhenz et al.
patent: 6074951 (2000-06-01), Kleinhenz et al.
patent: 6319794 (2001-11-01), Akatsu et al.
patent: 6541351 (2003-04-01), Bartlau et al.
patent: 2002/0022308 (2002-02-01), Ahn et al.

Affiliated with

Also associated with

Rating

Structure and method to fabricate ultra-thin Si channel devices does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Structure and method to fabricate ultra-thin Si channel devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Structure and method to fabricate ultra-thin Si channel devices will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3493716