Structure and method of using asymmetric junction engineered...

Details Structure and method of using asymmetric junction engineered... Structure and method of using asymmetric junction engineered...

2008-08-12

2011-10-11

Dinh, Son (Department: 2824)

Static information storage and retrieval

Systems using particular element

Flip-flop

C365S189180

Reexamination Certificate

active

08036022

ABSTRACT:
A design structure, structure and method of using and/or manufacturing structures having asymmetric junction engineered SRAM pass gates is provided. The structure includes an SRAM cell having asymmetric junction-engineered SRAM pass gates with a high leakage junction and a low leakage junction. The asymmetric junction-engineered SRAM pass gates are connected between an internal node and a bit-line node. The high leakage junction is from a body to the internal node and the low leakage junction is from the body to the bit-line node.

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