Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-10-30
2007-10-30
Wojciechowicz, Edward (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S255000, C257S347000, C257S206000, C257S278000, C257S330000, C257S369000, C257S401000, C257S622000, C257S628000
Reexamination Certificate
active
10907622
ABSTRACT:
A method and device for increasing pFET performance without degradation of nFET performance. The method includes forming a first structure on a substrate using a first plane and direction and forming a second structure on the substrate using a second plane and direction. In use, the device includes a nFET stack on a substrate using a first plane and direction, e.g., (100)<110> and a pFET stack on the substrate using a second plane and direction, e.g., (111)/<112>. An isolation region within the substrate is provided between the nFET stack and the pFET stack.
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Greenblum & Bernstein P.L.C.
Schnumann Daniel H.
Wojciechowicz Edward
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