Structure and method of manufacturing single-crystal silicon car

Details Structure and method of manufacturing single-crystal silicon car Structure and method of manufacturing single-crystal silicon car

1997-11-13

2000-06-20

Bowers, Charles

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Fluid growth step with preceding and subsequent diverse...

438931, 257 6, 257 77, H01L 2120, H01L 2986

Patent

active

060777605

ABSTRACT:
A method of manufacturing single-crystal silicon carbide/single-crystal silicon heterojunctions with negative differential resistance, by which one or more single-crystal silicon carbide/single-crystal silicon layer(s) with different types of dopants is/are formed on a silicon substrate, thereby forming new-type multiple negative differential resistance based on (a) single-crystal silicon carbide/single-crystal silicon heterojunction(s). The heterojunction(s) structure from top to bottom can be (1) Al/P--SiC/GCL/N--Si/Al; (2) Al/P--Si/GCL/P--SiC/GCL/N--Si/Al; and (3) Al/P--SiC/GCL/N--Si/GCL/P--SiC/GCL/N--Si/Al, wherein the GCL (Graded Reactant-gas Composition Ratio Layer) is a buffer layer formed between single-crystal silicon carbide layer and single-crystal silicon layer by gradually changing the composition of reaction gases. The structure and process of devices with negative differential resistance according to the invention are simpler than those of the prior art using Group III-V semiconductors. Furthermore, since a cheaper silicon substrate, and silicon carbide that can withstand high temperatures and radiation are used in this invention, manufacturing costs are greatly reduced.

REFERENCES:
patent: 5670414 (1997-09-01), Fang et al.

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