Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2005-12-06
2005-12-06
Nguyen, Tuan H. (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257S532000, C361S500000
Reexamination Certificate
active
06972473
ABSTRACT:
As disclosed herein, a capacitor structure and method are provided to enhance plate surface area to provide increased capacitance. The capacitor structure includes a base which includes a surface having an m×n array of upwardly or downwardly extending features, or a combination of upwardly and downwardly extending features, where m and n are each at least two. In addition, a first plate of the capacitor includes a first conductive layer which conforms to the contours of the surface. The capacitor also includes a conformal capacitor dielectric layer placed over the conformal conductive layer. When the capacitor is an electrolytic capacitor, the structure of the first plate and capacitor dielectric layer is contacted by an electrolyte. When the capacitor is a plate capacitor, a second plate including a second conductive layer is placed over the conformal capacitor dielectric layer. In addition, a method is disclosed for fabricating a capacitor having increased capacitance, by greatly increasing the surface area of a conductive plate of the capacitor.
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Lerner David Littenberg Krumholz & Mentlik LLP
Nguyen Tuan H.
Tessera Inc.
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