Semiconductor device manufacturing: process – Semiconductor substrate dicing – Having specified scribe region structure
Reexamination Certificate
2006-08-22
2006-08-22
Luu, Chuong A. (Department: 2818)
Semiconductor device manufacturing: process
Semiconductor substrate dicing
Having specified scribe region structure
C438S319000, C438S411000, C438S619000
Reexamination Certificate
active
07094669
ABSTRACT:
A structure and method of a semiconductor device with liner air gaps next to interconnects and dielectric layers. A dielectric layer is formed over a lower dielectric layer and a lower interconnect over a substrate. We form an interconnect opening in the dielectric layer. The opening has sidewalls of the dielectric layer. A sacrificial liner is formed over the sidewalls of the interconnect opening. An upper interconnect is formed that fills the opening. We remove the sacrificial liner/spacers to form (air) liner gaps.
REFERENCES:
patent: 6342722 (2002-01-01), Armacost et al.
patent: 6423629 (2002-07-01), Ahn et al.
patent: 6423630 (2002-07-01), Catabay et al.
patent: 6495906 (2002-12-01), Smith et al.
patent: 6642138 (2003-11-01), Pan et al.
patent: 6670022 (2003-12-01), Wallace et al.
patent: 6737725 (2004-05-01), Grill et al.
patent: 2001/0016412 (2001-08-01), Lee et al.
patent: 2002/0127844 (2002-09-01), Grill et al.
patent: 2002/0158337 (2002-10-01), Babich et al.
Anand, et al., Use of gas as low-k interlayer dielectric in LSI's : Demonstration of feasibility, IEEE transactions on electron device, vol. 44, No. 11, Nov. 1997, pp. 1965 to 1971.
Kohl, et al., Air Gaps for Electrical Connections, Electrochemical and solid -State letters, 1(1) pp. 49-51(1998).
Bu Xiaomei
Hsia Liang Choo
Lee Tae Jong
Lim Yeon Kheng
See Alex
Chartered Semiconductor Manufacturing LTD
Luu Chuong A.
Stoffel William J.
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