Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2008-06-03
2010-06-15
Sefer, A. (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257S665000, C257SE23141, C438S132000, C438S601000
Reexamination Certificate
active
07737528
ABSTRACT:
A fuse structure for an integrated circuit device includes an elongated metal interconnect layer defined within an insulating layer; a metal cap layer formed on only a portion of a top surface of the metal interconnect layer; and a dielectric cap layer formed on both the metal cap layer and the remaining portions of the metal interconnect layer not having the metal cap layer formed thereon; wherein the remaining portions of the metal interconnect layer not having the metal cap layer formed thereon are susceptible to an electromigration failure mechanism so as to facilitate programming of the fuse structure by application of electric current through the elongated metal interconnect layer.
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Bonilla Griselda
Chanda Kaushik
Filippi Ronald G.
Gambino Jeffrey P.
Grunow Stephan
Brown Katherine
Cantor & Colburn LLP
International Business Machines - Corporation
Sefer A.
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