Structure and method of formation of body contacts in SOI MOSFET

Details Structure and method of formation of body contacts in SOI MOSFET Structure and method of formation of body contacts in SOI MOSFET

1999-01-04

1999-10-12

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257382, 257384, 438151, H01L 2701, H01L 2712, H01L 310392

Patent

active

059659173

ABSTRACT:
A silicon-on-insulator MOSFET includes a silicon layer and an insulator layer positioned over a silicon substrate. An isolation region defines a silicon region positioned over the insulator layer. The silicon region further includes a source region, a drain region, and a doped body region. The drain region and source region do not extend to the bottom of the silicon region. A first metal conductor is electrically coupled to the side and top of the source region and the side of the body region. The first metal conductor establishes a potential at the body region to control floating body effects. A second metal conductor is electrically coupled to the top of the drain region.

REFERENCES:
patent: 5489792 (1996-02-01), Hu et al.
patent: 5543636 (1996-08-01), Yamazaki
patent: 5596215 (1997-01-01), Huang
patent: 5674760 (1997-10-01), Hong
patent: 5696386 (1997-12-01), Yamazaki
patent: 5742088 (1998-04-01), Pan et al.
patent: 5796126 (1998-08-01), Han et al.

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