Structure and method of fabricating FinFET with buried channel

Details Structure and method of fabricating FinFET with buried channel Structure and method of fabricating FinFET with buried channel

2011-03-22

2011-03-22

Trinh, Michael (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S156000, C438S173000, C438S175000, C438S176000, C438S177000, C438S212000, C438S282000, C438S283000, C438S284000, C257S365000, C257S401000

Reexamination Certificate

active

07910413

ABSTRACT:
A method of manufacturing a fin structure comprises forming a first structure of a first material type on a wafer and forming a buried channel of a second material adjacent sidewalls of the first structure. The second material type is different than the first material type. The structure includes a first structure and a buried channel.

REFERENCES:
patent: 6475869 (2002-11-01), Yu
patent: 6724008 (2004-04-01), Fitzergald
patent: 6753555 (2004-06-01), Takagi et al.
patent: 6759712 (2004-07-01), Bhattacharyya
patent: 6768156 (2004-07-01), Bhattacharyya
patent: 6800892 (2004-10-01), Bhattacharyya
patent: 6800905 (2004-10-01), Fried et al.
patent: 6808971 (2004-10-01), Bhattacharyya
patent: 6812504 (2004-11-01), Bhattacharyya
patent: 6830976 (2004-12-01), Fitzgerald
patent: 6831292 (2004-12-01), Currie et al.
patent: 6845034 (2005-01-01), Bhattacharyya
patent: 6846715 (2005-01-01), Fitzgerald et al.
patent: 2003/0201458 (2003-10-01), Clark et al.
patent: 2004/0157353 (2004-08-01), Ouyang et al.
patent: 2005/0116218 (2005-06-01), Yang
patent: 2006/0054969 (2006-03-01), Jang et al.
patent: 2007/0023756 (2007-02-01), Anderson et al.
patent: 1643697 (2005-07-01), None

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