Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – With current flow along specified crystal axis
Reexamination Certificate
2007-09-11
2007-09-11
Sarkar, Asok Kumar (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
With current flow along specified crystal axis
C257S627000, C257S628000, C257SE29003
Reexamination Certificate
active
11066659
ABSTRACT:
The present invention provides a method of integrating semiconductor devices such that different types of devices are formed upon a specific crystal orientation of a hybrid substrate that enhances the performance of each type of device. Specifically, the present invention provides a method of integrating semiconductor devices such that pFETs are located on a (110) crystallographic plane, while nFETs are located on a (100) crystallographic plane of a planar hybrid substrate. The method of the present invention also improves the performance of creating SOI-like devices with a combination of a buried insulator and counter-doping layers. The present invention also relates to semiconductor structures that are formed utilizing the method of the present invention.
REFERENCES:
patent: 4442448 (1984-04-01), Shimbo
patent: 5384473 (1995-01-01), Yoshikawa et al.
patent: 6870226 (2005-03-01), Maeda et al.
patent: 6902962 (2005-06-01), Yeo et al.
patent: 6972478 (2005-12-01), Waite et al.
patent: 7208815 (2007-04-01), Chen et al.
Ieong Meikei
Yang Min
International Business Machines - Corporation
Sarkar Asok Kumar
Scully , Scott, Murphy & Presser, P.C.
Tuchman, Esq. Ido
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