Structure and method of creating entirely self-aligned...

Details Structure and method of creating entirely self-aligned... Structure and method of creating entirely self-aligned...

2011-06-21

2011-06-21

Tran, Tan N (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S377000, C257S382000, C257S384000, C257S388000, C257SE29156

Reexamination Certificate

active

07964923

ABSTRACT:
The semiconductor structure is provided that has entirely self-aligned metallic contacts. The semiconductor structure includes at least one field effect transistor located on a surface of a semiconductor substrate. The at least one field effect transistor includes a gate conductor stack comprising a lower layer of polysilicon and an upper layer of a first metal semiconductor alloy, the gate conductor stack having sidewalls that include at least one spacer. The structure further includes a second metal semiconductor alloy layer located within the semiconductor substrate at a footprint of the at least one spacer. The structure also includes a first metallic contact comprising a metal from Group VIII or IB of the Periodic Table of Elements and at least one of W, B, P, Mo and Re located on, and self-aligned to the first metal semiconductor alloy layer and a second metallic contact comprising a metal from Group VIII or IB of the Periodic Table of Elements and at least one of W, B, P, Mo and Re located on, and self-aligned to the second metal semiconductor alloy layer.

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