Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Junction field effect transistor
Reexamination Certificate
2007-03-20
2007-03-20
Pham, Long (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Junction field effect transistor
Reexamination Certificate
active
10904808
ABSTRACT:
A semiconductor device structure is provided which includes a first semiconductor device; a second semiconductor device; and a unitary stressed film disposed over both the first and second semiconductor devices. The stressed film has a first portion overlying the first semiconductor device, the first portion imparting a first magnitude compressive stress to a conduction channel of the first semiconductor device, the stressed film further having a second portion overlying the second semiconductor device, the second portion not imparting the first magnitude compressive stress to a conduction channel of the second semiconductor device, the second portion including an ion concentration not present in the second portion such that the second portion imparts one of a compressive stress having a magnitude much lower than the first magnitude, zero stress, and a tensile stress to the conduction channel of the second semiconductor device.
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Chan Victor W. C.
Lee Yong M.
Yang Haining
Chartered Semiconductor Manufacturing Ltd.
Cioffi James J.
International Business Machines - Corporation
Pham Long
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