Structure and method including dry etching techniques for formin

Details Structure and method including dry etching techniques for formin Structure and method including dry etching techniques for formin

1995-01-03

1997-05-06

Schilling, Richard L.

Etching a substrate: processes

Masking of a substrate using material resistant to an etchant

Mask is multilayer resist

216 57, 216 94, 216 13, B44C 122, C03C 1500, C03C 2506, C23F 100

Patent

active

056267738

ABSTRACT:
An array of thermal sensor elements (16) is formed from a pyroelectric substrate (46) having an infrared absorber and common electrode assembly (18) attached thereto. A first layer of metal contacts (60) is formed to define masked (61) and unmasked (68) regions of the substrate (46). A second layer of metal contacts (62) is formed on the first layer of contacts (60). A radiation etch mask layer (66) is formed to encapsulate the exposed portions of the second layer of contacts (62). A dry-etch mask layer (74) is formed to encapsulate the exposed portions of the first layer of contacts (60) and radiation etch mask layer (66). An initial portion of each unmasked region (68) is etched using a dry-etch process. The remaining portions of the unmasked regions (68) are exposed to an etchant (70) and irradiated with electromagnetic energy to substantially increase the reactivity between the remaining portions and the etchant (70). During such irradiation, the etchant (70) etches the remaining portions substantially faster than the first layer of contacts (60) and the radiation etch mask layer (66).

REFERENCES:
patent: 3846820 (1974-11-01), Lampe et al.
patent: 4018608 (1977-04-01), Frazier
patent: 4080532 (1978-03-01), Hopper
patent: 4142207 (1979-02-01), McCormack et al.
patent: 4143269 (1979-03-01), McCormack et al.
patent: 4162402 (1979-07-01), Hopper
patent: 4275302 (1981-06-01), Imbert et al.
patent: 4379232 (1983-04-01), Hopper
patent: 4594507 (1986-06-01), Elliott et al.
patent: 4663529 (1987-05-01), Jenner et al.
patent: 4705361 (1987-11-01), Frazier et al.
patent: 4750979 (1988-06-01), Gee et al.
patent: 4751387 (1988-06-01), Robillard
patent: 4949783 (1990-08-01), Lakios et al.
patent: 4980338 (1990-12-01), Yamazaki
patent: 4994672 (1991-02-01), Cross et al.
patent: 5010251 (1991-04-01), Grinberg et al.
patent: 5021663 (1991-06-01), Hornbeck
patent: 5047644 (1991-09-01), Meissner et al.
patent: 5051591 (1991-09-01), Trotta et al.
patent: 5196703 (1993-03-01), Keenan
patent: 5201989 (1993-04-01), Douglas et al.
patent: 5238530 (1993-08-01), Douglas et al.
patent: 5238592 (1993-08-01), Douglas
patent: 5242537 (1993-09-01), Nelson
patent: 5264326 (1993-11-01), Miessner et al.
patent: 5367167 (1994-11-01), Keenan
Rousseau, Francois, et al., New Approaches for Dry Etching Metal Oxides at Low Temperature and High Rates, paper submitted at the Chemistry Department University of New Mexico, Albuquerque, NM 87131, pp. 1-6.
Rousseau, Francois, et al. Low-Temperature Dry Etching of Metal Oxides and ZnS Via Formation of Volatile Metal B-diketonate Complexes, Materials Chemistry Communications, paper submitted to J. Mater, May 29, 1992, pp. 1-6.
PlasmaQuest, Electron Cyclotron Resonance: At the Cusp of a Technology Shift, paper prepared by PlasmaQuest, Inc. 850 N. Dorothy, Suite 504, Richardson, Texas 75081, vol. 6, No. 1.
R. A. Wood, "HIDAD-A Monolithic, Silicon, Uncooled Infrared Imaging Focal Plane Array," HIDAD, date unknown, pp. 579-581.
H. R. Kaufman, et al., "Characteristics, Capabilities and Applications of Broad-Beam Sources," Commonwealth Scientific Corporation (38 pages).
R. N. Castellano, et al., "A Survey of Ion Beam Milling Techniques for Piezoelectric Device Fabrication," pp. 128-134.
Yamamichi, et al., "SrTiO.sub.3 Thin Film Preparation by Ion Beam Sputtering and Its Dielectric Properties," Fundamental Research Laboratories, NEC Corporation, 1991, pp. 2193-2196.
R. Watton, et al., "Technologies and Performance for Linear and Two Dimensional Pyroelectric Arrays," SPIE vol. 510 Infrared Technology X, 1984, 139-148.
M. Cantagrel, et al. "Argon Ion Etching in a Reactive Gas," Journal of Materials science 8, 1973, pp. 1711-1716.
D. J. Warner, et al., "The Preparation and Performance of Reticulated Targets for the Pyroelectric Vidicon," Ferroelectrics, 1981, vol. 33, pp. 249-253.
S. Wolf, et al., "Silicon Processing for the VLSI Era," vol. I, Process Technology (4 pages).
U.S. Patent Application USSN 08/222,146 entitled Multiple Level Mask for Patterning of Ceramic Materials, filed Apr. 4, 1994, assigned to Texas Instruments Inc. (Attorney's Docket TI-19182).

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