Structure and method for ultra-small grain size polysilicon

Details Structure and method for ultra-small grain size polysilicon Structure and method for ultra-small grain size polysilicon

2005-11-22

2005-11-22

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C438S198000, C438S585000

Reexamination Certificate

active

06967384

ABSTRACT:
A method of forming a semiconductor structure (and the resulting structure), includes providing a nitride layer between a silicon-containing layer and a polysilicon layer.

REFERENCES:
patent: 4931897 (1990-06-01), Tsukamoto et al.
patent: 5429972 (1995-07-01), Anjum et al.
patent: 5953254 (1999-09-01), Pourkeramati
patent: 6228740 (2001-05-01), Niroomand et al.
patent: 6294442 (2001-09-01), Kamal

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