Structure and method for thin film device

Details Structure and method for thin film device Structure and method for thin film device

2008-03-11

2008-03-11

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S942000, C257S021000, C257S021000

Reexamination Certificate

active

07341893

ABSTRACT:
Provided is a thin film device and an associated method of making a thin film device. For example, a thin film transistor with nano-gaps in the gate electrode. The method involves providing a substrate. Upon the substrate are then provided a plurality of parallel spaced electrically conductive strips. A plurality of thin film device layers are then deposited upon the conductive strips. A 3D structure is provided upon the plurality of thin film device layers, the structure having a plurality of different heights. The 3D structure and the plurality of thin film device layers are then etched to define a thin film device, such as for example a thin film transistor that is disposed above at least a portion of the conductive strips.

REFERENCES:
patent: 6028333 (2000-02-01), Yamazaki et al.
patent: 6351841 (2002-02-01), Tickle
patent: 6476419 (2002-11-01), Yasuda
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patent: 7056834 (2006-06-01), Mei et al.
patent: 2004/0002216 (2004-01-01), Taussig et al.
patent: 2004/0217085 (2004-11-01), Jeans

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