Structure and method for semiconductor power devices

Details Structure and method for semiconductor power devices Structure and method for semiconductor power devices

2011-03-22

2011-03-22

Tran, Minh-Loan T (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE27112

Reexamination Certificate

active

07910995

ABSTRACT:
A semiconductor device includes a semiconductor-on-insulator region on a substrate. The semiconductor-on-insulator region includes a first semiconductor region overlying a dielectric region. The device includes an MOS transistor and a bipolar transistor. The MOS transistor has a drain region, a body region, and a source region in the first semiconductor region. The MOS transistor also includes a gate. The device also includes a second semiconductor region overlying the substrate and adjacent to the drain region, and a third semiconductor region overlying the substrate and adjacent to the second semiconductor region. The bipolar transistor includes has the drain region of the MOS transistor as an emitter, the second semiconductor region as a base, and the third semiconductor region as a collector. Accordingly, the drain of the MOS transistor also functions as the emitter of the bipolar transistor. Additionally, the gate and the base are coupled by a resistive element.

REFERENCES:
patent: 4962054 (1990-10-01), Shikata
patent: 5504358 (1996-04-01), Hong
patent: 5567629 (1996-10-01), Kubo
patent: 7061057 (2006-06-01), Babcock et al.
patent: 7489008 (2009-02-01), Lee et al.
patent: 2006/0011981 (2006-01-01), Lee
patent: 2006/0043494 (2006-03-01), Ipposhi et al.
patent: 2006/0095873 (2006-05-01), Kaya
patent: 2007/0013008 (2007-01-01), Xu et al.
patent: 2007/0034942 (2007-02-01), Xu et al.
patent: 2007/0138548 (2007-06-01), Kocon et al.

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