Structure and method for protecting memory cells from UV...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257S635000, C257S637000, C257S649000, C438S689000, C438S744000, C438S724000, C438S795000

Reexamination Certificate

active

06974989

ABSTRACT:
According to one exemplary embodiment, a structure comprises a substrate. The structure further comprises at least one memory cell situated on the substrate. The structure further comprises a first interlayer dielectric layer situated over the at least one memory cell and over the substrate. The structure further comprises an oxide cap layer situated on the first interlayer dielectric layer. According to this exemplary embodiment, the structure further comprises an etch stop layer comprising TCS nitride situated on the oxide cap layer, where the etch stop layer blocks UV radiation. The structure further comprises a second interlayer dielectric layer situated on the etch stop layer. The structure may further comprise a trench situated in the second interlayer dielectric layer and the etch stop layer, where the trench is filled with copper. The structure may further comprise an anti-reflective coating layer situated on the second interlayer dielectric layer.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Structure and method for protecting memory cells from UV... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Structure and method for protecting memory cells from UV..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Structure and method for protecting memory cells from UV... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3467572

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.