Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-12-13
2005-12-13
Abraham, Fetsum (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S635000, C257S637000, C257S649000, C438S689000, C438S744000, C438S724000, C438S795000
Reexamination Certificate
active
06974989
ABSTRACT:
According to one exemplary embodiment, a structure comprises a substrate. The structure further comprises at least one memory cell situated on the substrate. The structure further comprises a first interlayer dielectric layer situated over the at least one memory cell and over the substrate. The structure further comprises an oxide cap layer situated on the first interlayer dielectric layer. According to this exemplary embodiment, the structure further comprises an etch stop layer comprising TCS nitride situated on the oxide cap layer, where the etch stop layer blocks UV radiation. The structure further comprises a second interlayer dielectric layer situated on the etch stop layer. The structure may further comprise a trench situated in the second interlayer dielectric layer and the etch stop layer, where the trench is filled with copper. The structure may further comprise an anti-reflective coating layer situated on the second interlayer dielectric layer.
Ang Boon-Yong
Chen Cinti X.
Haddad Sameer S.
Kang Inkuk
Wada Hajime
Abraham Fetsum
Farjami & Farjami LLP
Spansion LLC
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