Semiconductor device manufacturing: process – Forming schottky junction
Reexamination Certificate
1999-02-03
2001-03-06
Whitehead, Jr., Carl (Department: 2822)
Semiconductor device manufacturing: process
Forming schottky junction
C438S572000, C438S092000
Reexamination Certificate
active
06197667
ABSTRACT:
BACKGROUND OF THE INVENTION
1. Field of the Invention
The invention relates to a structure and method for manufacturing group III-V composite Schottky. contacts having high-temperature proof, oxidation resistance and low reverse leakage currents.
2. Description of Related Art
As to the prior art, please refer to “Ruthenium and sulphide passivation of GaAs” by S. T. Ali et al, Applied Surface Science 93 (1996) 37-43 and “Electrical Characteristics and Surface Chemistry of P
2
S
5
-Passivated GaAs” by Minorn Sakata et al, Jpn., J. Appl. Phys. Vol. 33(1994) PP. 3813-3824 Contact barriers of Schottky contacts affected by surface state and impurities is mentioned in those papers. Currently, a sulphuration treatment is used to decreased oxidation and defects, thereby efficiently increasing Schottky barriers. However, since a compound formed by sulphur and semiconductor material has a low bonding energy, the sulphur is easily volatilized. In this case, if these devices are put into the environment with air or with higher temperature for a long time, the surfaces of the substrates which have been through the sulphuration treatment appear a high oxidation state resulting in low Schottky barriers. Therefore, the manufactured devices cannot operate under a high temperature for a long time. This problem is desired to be resolved by semiconductor industry.
SUMMARY OF THE INVENTION
The invention relate to a method for manufacturing various Schottky contacts, which resolves the oxidation state on the surfaces of the Group III-V composite semiconductors by forming a thin and stable sulphur fluoride/phosphorus layer, and in particular to a method for increasing Schottky barriers and decreasing the surface state.
In Schottky contacts manufacturing, the surface state, surface oxidation and voids and other defects of epitaxial layers obviously affect Schottky barriers, reverse leakage currents and breakdown voltage.
By using a chemical reaction technique to form thin composite semiconductor layers on semiconductors, it is helpful to stabilize the surface state, prevent oxidation and improve a Fermi energy level pinning effect, thereby increasing the Schottky barriers between metals and semiconductors. Even though there are various complicated steps in the Schottky contacts manufacturing, how to decrease the surface oxidation is a key to success. Therefore, this problem is desired to be resolved in semiconductor industry.
As can be known from the above, the object of the invention is to provide a method with simplicity and high-repeatation for efficiently resolving the above-mentioned problem. The other object of the invention is to provide a method for manufacturing Group III-V composite Schottky contacts having high production value.
REFERENCES:
patent: 3619288 (1971-11-01), Sirti
patent: 5585649 (1996-12-01), Ishikawa et al.
patent: 5796127 (1998-08-01), Hayafuji et al.
Hwang, K. et al., A Study of New Surface Passivation Using P2S5/(NH4)2S on GaAs Schottky Barrier Diodes,J. Appl. Phys., 67(4):2162-2165 (Feb. 15, 1990).
Ali, S. et al., “Ruthenium and Sulphide Passivation of GaAs”,Applied Surface Science, 93:37-43 (1996).
Sakata, M. et al., “Electrical Characteristics and Surface Chemistry of P2S5-Passivated GaAs”,Jpn. J. Appl. Phys., 33:3813-3824 (1994).
Chang Liann-Be
Wang Hung-Tsung
Davis Jamie L.
Jr. Carl Whitehead
Merchant & Gould P.C.
National Science Council
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