Structure and method for manufacturing devices having inverse T-

Details Structure and method for manufacturing devices having inverse T- Structure and method for manufacturing devices having inverse T-

1997-05-29

2000-04-04

Crane, Sara

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257371, 257400, H01L 31119

Patent

active

060464755

ABSTRACT:
A structure for manufacturing devices having inverse T-shaped well regions, which are formed on a substrate, comprises a first doped region and second doped region which have higher impurity concentrations and two third doped regions which have a lower impurity concentration. The first doped region formed on the substrate by a high-energy ion-implantation process is kept at a predetermined distance from the surface of the substrate. The second doped region extends from the surface of the substrate toward the downside to connect to the first doped region, such that two third doped regions are formed. The second doped region is formed by an ion-implantation process through an opening of a mask. Furthermore, a gate is formed above the second doped region, and source and drain regions are formed on the substrate. Therefore, a device having an inverse T-shaped well region is completely fabricated.

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