Semiconductor device manufacturing: process – Having magnetic or ferroelectric component
Reexamination Certificate
2008-05-07
2011-11-01
Richards, N Drew (Department: 2895)
Semiconductor device manufacturing: process
Having magnetic or ferroelectric component
C257S001000, C257S002000, C257S003000, C257S004000, C257S005000, C257S012000, C257S043000, C365S145000
Reexamination Certificate
active
08048684
ABSTRACT:
Disclosed herein is a structure and method for manipulating a spin state, regarded as important in the field of spintronics, by which the distribution of spin-up and spin-down states of carriers in a hybrid double quantum disk structure, composed of a diluted magnetic semiconductor and a ferroelectric compound semiconductor, is manipulated through dipole polarization switching of the ferroelectric compound semiconductor without a change in bias. Giant Zeeman splitting properties of the diluted magnetic semiconductor and polarization properties of the ferroelectric compound semiconductor are applied in conjunction with the Pauli exclusion principle, thus enabling the combination or separation of carriers in spin-up and spin-down states in the hybrid double quantum disk structure. The spin relaxation time in the structure is on the order of microseconds, during which the spin state is well-defined, and therefore, the structure can be applied to microprocessors having gigahertz clock speeds.
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Nammee Kim et al Manipulation of spin states by dipole polarization switching, Applied Physics Letters 91, 113504 (2007).
Kim Hee Sang
Kim Nam Mee
Jung Michael
Richards N Drew
Samsung Electronics Co,. Ltd.
Seoul National University Industry Foundation
Sughrue & Mion, PLLC
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