Structure and method for improving storage latch...

Details Structure and method for improving storage latch... Structure and method for improving storage latch...

2011-06-21

2011-06-21

Phung, Anh (Department: 2824)

Static information storage and retrieval

Systems using particular element

Flip-flop

C257S297000, C257S302000, C257SE27098, C257SE29346, C365S149000, C365S181000, C365S188000

Reexamination Certificate

active

07965540

ABSTRACT:
A digital logic storage structure includes cross coupled first and second complementary metal oxide semiconductor (CMOS) inverters formed on a semiconductor substrate, the CMOS inverters including a first storage node and a second storage node that is the logical complement of the first storage node; both of the first and second storage nodes each selectively coupled to a deep trench capacitor through a switching transistor, with the switching transistors controlled by a common capacitance switch line coupled to gate conductors thereof; wherein, in a first mode of operation, the switching transistors are rendered nonconductive so as to isolate the deep trench capacitors from the inverter storage nodes and, in a second mode of operation, the switching transistors are rendered conductive so as to couple the deep trench capacitors to their respective storage nodes, thereby providing increased resistance of the storage nodes to single event upsets (SEUs).

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