Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Insulating material
Reexamination Certificate
2008-03-18
2008-03-18
Zarneke, David (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
Insulating material
C257S706000, C257S713000, C257SE23087, C257SE23102, C257SE23108, C257SE23109
Reexamination Certificate
active
10955238
ABSTRACT:
A thermally conductive structure for a semiconductor integrated circuit and a method for making the structure. The structure comprises one or more vertical and/or horizontal thermally conductive elements disposed proximate a device for improving thermal conductivity from the device to a substrate of the integrated circuit. In one embodiment a heat sink is affixed to the integrated circuit for heat flow from the integrated circuit. The method comprises forming openings in material layers overlying the semiconductor substrate, wherein the openings are disposed proximate the device and extend to the substrate. A thermally conductive material is formed in the openings to provide a thermal path from the device to the substrate.
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Chen Alan Sangone
Hamad Amal Ma
Kerr Daniel Charles
Martin, Jr. Edward Paul
Russell William A.
Agere Systems Inc.
Zarneke David
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