Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-08-09
2011-08-09
Brewster, William M (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S328000, C257SE21460, C257SE21410, C257SE29262, C257SE49002, C438S151000, C438S270000, C438S587000
Reexamination Certificate
active
07994573
ABSTRACT:
A field effect transistor (FET) includes body regions of a first conductivity type over a semiconductor region of a second conductivity type. The body regions form p-n junctions with the semiconductor region. Source regions of the second conductivity type extend over the body regions. The source regions form p-n junctions with the body regions. Gate electrodes extend adjacent to but are insulated from the body regions by a gate dielectric. A carbon-containing region extends in the semiconductor region below the body regions.
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Baptiste Wilner Jean
Brewster William M
Fairchild Semiconductor Corporation
Kilpatrick Townsend & Stockton LLP
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