Structure and method for forming hybrid substrate

Details Structure and method for forming hybrid substrate Structure and method for forming hybrid substrate

2008-12-10

2011-10-18

Ghyka, Alexander (Department: 2812)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C438S694000, C438S455000, C438S478000, C257SE21088, C257SE21567, C257SE21214, C257SE21599

Reexamination Certificate

active

08039401

ABSTRACT:
A first and a second substrate are bonded together to thereby form a unitary hybrid substrate. Predefined portions of the first substrate are removed to form openings in the first substrate through which surface regions of the second substrate are exposed. A selective epitaxial growth process that is selective with respect to the crystalline orientations of the first and second substrates is carried out to thereby form epitaxial silicon from the exposed surfaces of the second substrate but not from exposed surfaces of the first substrate. The epitaxial silicon formed from the exposed surfaces of the second substrate has the same crystalline orientation as the second substrate.

REFERENCES:
patent: 6555891 (2003-04-01), Furukawa et al.
patent: 7023055 (2006-04-01), Ieong et al.
patent: 7208815 (2007-04-01), Chen et al.
patent: 7235433 (2007-06-01), Waite et al.
patent: 7253034 (2007-08-01), Chan et al.
patent: 7435639 (2008-10-01), Winstead et al.
patent: 2004/0256700 (2004-12-01), Doris et al.
patent: 2005/0093104 (2005-05-01), Ieong et al.
patent: 2005/0167742 (2005-08-01), Challa et al.
patent: 2007/0281436 (2007-12-01), Sadaka et al.
U.S. Appl. No. 12/174,030, filed Jul. 16, 2008, Qi Wang et al.
PCT International Search Report of the International Searching Authority for Application No. PCT/US2008/86661, Mailed Feb. 4, 2009.
PCT Written Opinion of the International Searching Authority for Application No. PCT/US2008/86661, Mailed Feb. 4, 2009.

Affiliated with

Also associated with

Rating

Structure and method for forming hybrid substrate does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Structure and method for forming hybrid substrate, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Structure and method for forming hybrid substrate will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4280672