Semiconductor device manufacturing: process – Chemical etching – Combined with coating step
Reexamination Certificate
2005-07-12
2005-07-12
Nelms, David (Department: 2818)
Semiconductor device manufacturing: process
Chemical etching
Combined with coating step
C438S672000, C438S270000, C438S274000, C257S774000
Reexamination Certificate
active
06916745
ABSTRACT:
In accordance with an embodiment of the present invention, a semiconductor device is formed as follows. An exposed surface area of a silicon layer where silicon can be removed is defined. A portion of the silicon layer is removed to form a middle section of a trench extending into the silicon layer from the exposed surface area of the silicon layer. Additional exposed surface areas of the silicon layer where silicon can be removed are defined. Additional portions of the silicon layer are removed to form outer sections of the trench such that the outer sections of the trench extend into the silicon layer from the additional exposed surface areas of the silicon layer. The middle section of the trench extends deeper into the silicon layer than the outer sections of the trench.
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Herrick Robert
Losee Becky
Probst Dean
Fairchild Semiconductor Corporation
Nelms David
Townsend and Townsend / and Crew LLP
Tran Long
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