Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-03-28
2006-03-28
Zarneke, David A. (Department: 2891)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
Reexamination Certificate
active
07018916
ABSTRACT:
A method (and structure) that selectively forms a dielectric chamber on an electronic device by forming a dummy structure over a semiconductor substrate, depositing a dielectric layer over the dummy structure, forming an opening through the dielectric layer to the dummy structure, and removing the dummy structure to form the dielectric chamber.
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patent: 6013536 (2000-01-01), Nowak et al.
patent: 6057224 (2000-05-01), Bothra et al.
patent: 6509623 (2003-01-01), Zhao
Feng George C.
Hsu Louis L.
Joshi Rajiv V.
Karra, Esq. Satheesh
McGinn IP Law Group PLLC
Zarneke David A.
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