Structure and method for flash eprom memory erasable by sectors

Details Structure and method for flash eprom memory erasable by sectors Structure and method for flash eprom memory erasable by sectors

1993-03-08

1995-01-24

Popek, Joseph A.

Static information storage and retrieval

Read/write circuit

Erase

365185, 365900, G11C 1606

Patent

active

053847431

ABSTRACT:
A device for the erasure of sectors of a flash EPROM memory map comprises routing means to apply an erasing voltage to several sectors selected simultaneously by a predetermined resistor for all the sectors. Advantageously, the routing means enable the application of the erasing voltage to a sector selected individually by a resistor proper to the sector.

REFERENCES:
patent: 4949309 (1990-08-01), Rao
patent: 4999812 (1991-03-01), Amin
patent: 5051953 (1991-09-01), Kitazawa et al.
1990 Symposium on VLSI Circuits, Jun. 9, 1990, pp. 101-102, Nozaki et al., "A IMBIT EEPROM with MONOS Memory Cell . . . ".

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