Structure and method for fine pitch flip chip substrate

Details Structure and method for fine pitch flip chip substrate Structure and method for fine pitch flip chip substrate

2005-11-29

2005-11-29

Thomas, Tom (Department: 2815)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S629000, C438S637000, C438S639000, C438S640000, C438S667000, C438S668000, C438S672000, C438S675000, C257S737000, C257S738000, C257S774000, C257S778000, C257S779000, C257S700000

Reexamination Certificate

active

06969674

ABSTRACT:
The present invention relates to a Fine Pitch flip chip substrate. A black oxide dam is made on the metal circuit between bump pads to replace the conventional solder resist so that the bump pads will not be buried in the solder resist. A small via is drilled by laser drilling and plated filled with copper to be used as the connection between the circuits. By this way, the density and the flexibility of routing could be improved. A mesh pattern can be made in the limited space to increase the stiffness of the substrate.

REFERENCES:
patent: 6352925 (2002-03-01), Schrock
patent: 6410858 (2002-06-01), Sasaki et al.
patent: 6518513 (2003-02-01), Enomoto et al.
patent: 6531661 (2003-03-01), Uchikawa et al.
patent: 6591495 (2003-07-01), Hirose et al.
patent: 6711812 (2004-03-01), Lu et al.
patent: 6739048 (2004-05-01), Jones et al.

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