Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-02-15
2005-02-15
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S078000, C257S016000, C257S043000, C257S063000, C257S343000, C438S046000, C438S234000
Reexamination Certificate
active
06855992
ABSTRACT:
A semiconductor structure includes a monocrystalline silicon substrate, an amorphous oxide material overlying the monocrystalline silicon substrate, a monocrystalline perovskite oxide material overlying the amorphous oxide material, and a monocrystalline compound semiconductor material overlying the monocrystalline perovskite oxide material. A composite transistor includes a first transistor having first active regions formed in the monocrystalline silicon substrate, a second transistor having second active regions formed in the monocrystalline compound semiconductor material, and a mode control terminal for controlling the first transistor and the second transistor.
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pat
Bosco Bruce Allen
Emrick Rudy M.
Franson Steven James
Holmes John E.
Rockwell Stephen Kent
Flynn Nathan J.
Forde Remmon R.
Motorola Inc.
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