Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2011-01-11
2011-01-11
Le, Thao P. (Department: 2818)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C257SE21575
Reexamination Certificate
active
07867887
ABSTRACT:
The present invention provides bond pads structures between semiconductor integrated circuits and the chip package with enhanced resistance to fracture and improved reliability. Mismatch in the coefficient of temperature expansion (CTE) among the materials used in bond structures induces stress and shear on them that may result in fractures within the back end dielectric stacks and cause reliability problems of the packaging. By placing multiple metal pads which are connected to the bond pad through multiple metal via, the adhesion between the bond pads and the back end dielectric stacks is enhanced.
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Wakharkar et al., “Materials Technologies for Thermomechanical Management of Organic Packages”, Intel Technology Journal, Nov. 9, 2005, pp. 309-324, col. 09, Issue 04.
Farooq Mukta G.
Jung Dae Young
Melville Ian D.
International Business Machines - Corporation
Le Thao P.
Li Wenjile
Scully , Scott, Murphy & Presser, P.C.
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