Static information storage and retrieval – Systems using particular element – Resistive
Reexamination Certificate
2007-10-31
2010-12-28
Pham, Ly D (Department: 2827)
Static information storage and retrieval
Systems using particular element
Resistive
C365S163000, C365S225700, C365S175000
Reexamination Certificate
active
07859884
ABSTRACT:
A memory array having memory cells comprising a diode and a phase change material is reliably programmed by maintaining all unselected memory cells in a reverse biased state. Thus leakage is low and assurance is high that no unselected memory cells are disturbed. In order to avoid disturbing unselected memory cells during sequential writing, previously selected word and bit lines are brought to their unselected voltages before new bit lines and word lines are selected. A modified current mirror structure controls state switching of the phase change material.
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Pham Ly D
SanDisk 3D LLC
Vierra Magen Marcus & DeNiro LLP
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