Structure and manufacturing method of semiconductor memory...

Details Structure and manufacturing method of semiconductor memory... Structure and manufacturing method of semiconductor memory...

2010-12-22

2011-10-04

Bryant, Kiesha (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S292000, C257SE21295, C257SE27004

Reexamination Certificate

active

08030695

ABSTRACT:
A semiconductor memory device having a cross point structure includes a plurality of upper electrodes arranged to extend in one direction, and a plurality of lower electrodes arranged to extend in another direction at a right angle to the one direction of the upper electrodes. Memory materials are provided between the upper electrodes and the lower electrodes for storage of data. The memory materials are made of a perovskite material and arranged at the lower electrodes side of the corresponding upper electrode extending along the corresponding upper electrode.

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