Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2009-03-27
2011-12-27
Pham, Hoai V (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S408000, C257SE27060, C257SE27062
Reexamination Certificate
active
08084827
ABSTRACT:
A group of high-performance like-polarity insulated-gate field-effect transistors (100, 108, 112, 116, 120, and124or102, 110, 114, 118, 122, and126) have selectably different configurations of lateral source/drain extensions, halo pockets, and gate dielectric thicknesses suitable for a semiconductor fabrication platform that provides a wide variety of transistors for analog and/or digital applications. Each transistor has a pair of source/drain zones, a gate dielectric layer, and a gate electrode. Each source/drain zone includes a main portion and a more lightly doped lateral extension. The lateral extension of one of the source/drain zones of one of the transistors is more heavily doped or/and extends less deeply below the upper semiconductor surface than the lateral extension of one of the source/drain zones of another of the transistors.
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Archer Donald M.
Bahl Sandeep R.
Bulucea Constantin
French William D.
Parker D. Courtney
Martin Ronald J.
National Semiconductor Corporation
Pham Hoai V
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